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MMBTA94LT1G
Maximum Temperatures
Storage Temperatur
e ............................................................................................ -55 ~ +150
°
C
Junction Temperature .................................................................................... +150
°
C Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25
°
C) ................................................................................ 350 mW
•
Maximum Voltages and Currents (Ta=25
°
C)
VCBO Collector to Base Voltage ...................................................................................... -400 V
VCEO Collector to Emitter Voltage ................................................................................... -400 V
VEBO Emitter to Base Voltage ............................................................................................. -6 V
IC Collector Current ...................................................................................................... -15
0 mA
Characteristics
(Ta=25
°
C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
-400
-
-
V
IC=-100uA, IE=0
BVCEO
-400
-
-
V
IC=-1mA, IB=0
BVEBO
-6
-
-
V
I
E=-10uA, IC=0
ICBO
-
-
-100
nA
VCB=-400V, IE=0
IEBO
-
-
-100
nA
VEB=
-6V, IC=0
ICES
-
-
-500
nA
VCE=-400V, VBE=0
*VCE(sat)1
-
-
-200
mV
IC=-1mA, IB=-0.1mA
*VCE(sat)2
-
-
-300
mV
IC=-10mA, IB=-1mA
*VCE(sat)3
-
-
-600
mV
IC=-50mA, IB=-5mA
*VBE(sat)
-
-
-900
mV
IC=-10mA, IB=-1mA
*hFE1
50
-
-
VCE=-
10V, IC=-1mA
*hFE2
75
-
200
VCE=-10V
, IC=-10mA
*hFE3
60
-
-
VCE=-10V
, IC=-50mA
*hFE4
2
0
-
-
VCE=-10V
, IC=-100mA
Cob
-
4
6
pF
VC
E=-10V, f=1MHz
*Pulse Test: Pulse Width
≤
380us, Duty Cycle
≤
2%
that requires high voltage.
SOT– 23
1
BASE
2
EMITTER
COLLECTOR
3
We declare that the material of product
compliance with RoHS requirements.
DEVICE MARKING
M
MBTA94LT1 = 4Z
201
2
-
11
WILLAS ELECTRONIC CORP.
MM
B
T
A
9
4
L
T1